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| MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF553/D NPN Silicon RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the VHF frequency range. * Specified @ 12.5 V, 175 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11.5 dB Efficiency 60% (Typ) * Cost Effective PowerMacro Package * Electroless Tin Plated Leads for Improved Solderability * Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Total Device Dissipation @ TC = 75C (1, 2) Derate above 75C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg Value 16 36 4.0 500 3.0 40 - 55 to +150 Unit Vdc Vdc Vdc mAdc Watts mW/C C MRF553 1.5 W, 175 MHz RF LOW POWER TRANSISTOR NPN SILICON CASE 317D-02, STYLE 2 THERMAL CHARACTERISTICS Characteristic Thermal Resistance Junction to Case Symbol RJC Max 25 Unit C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, VBE = 0) Collector-Base Breakdown Voltage (IC = 5.0 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 1.0 mAdc, IC = 0) Collector Cutoff Current (VCE = 15 Vdc, VBE = 0, TC = 25C) V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICES 16 36 36 4.0 -- -- -- -- -- -- -- -- -- -- 5.0 Vdc Vdc Vdc Vdc mAdc ON CHARACTERISTICS DC Current Gain (IC = 250 mAdc, VCE = 5.0 Vdc) hFE 30 -- 200 -- NOTES: (continued) 1. TC, Case temperature measured on collector lead immediately adjacent to body of package. 2. The MRF553 PowerMacro must be properly mounted for reliable operation. AN938, "Mounting Techniques in PowerMacro Transistor," discusses methods of mounting and heatsinking. REV 7 (c)MOTOROLA RF DEVICE DATA Motorola, Inc. 1995 MRF553 1 ELECTRICAL CHARACTERISTICS -- continued (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cob -- 12 20 pF FUNCTIONAL TESTS Common-Emitter Amplifier Power Gain (VCC = 12.5 Vdc, Pout = 1.5 W, f = 175 MHz) Collector Efficiency (VCC = 12.5 Vdc, Pout = 1.5 W, f = 175 MHz) Load Mismatch Stress (VCC = 12.5 Vdc, Pout = 1.5 W, f = 175 MHz, VSWR 10:1 All Phase Angles) Figures 1, 2 Figures 1, 2 Gpe No Degradation in Output Power 11.5 50 13 60 -- -- dB % -- VBB = 12.5 V C5 C6 + R1 L9 R2 D1 B 5xB VCC = 12.5 V + C10 C9 L5 C8 B C4 L4 D.U.T. L6 L8 L7 C7 RF OUTPUT RF INPUT L1 C2 L2 L3 C1 C3 C1 -- 36 pF Mini Underwood C2 -- 47 pF Mini Underwood C3 -- 91 pF Mini Underwood C4 -- 68 pF Mini Underwood C5, C9 -- 1.0 F Erie Red Cap Capacitor C6, C10 -- 0.1 F, 35 V Tantulum C7 -- 470 pF Chip Capacitor C8 -- 2200 pF Chip Capacitor R1 -- 4.7 k, 1/4 W R2 -- 100 , 1/4 W D1 -- 1N4148 Diode L1 -- 3 Turns, #18 AWG, 0.210 ID, 3/16 Length L2, L4, L7 -- 0.62, #18 AWG Wire Bent into "V" L3, L6 -- 60 x 125 x 250 Mils Copper Pad on 27 Mils Thick Alumina Substrate L5 -- 12 H Molded Choke L8 -- 7 Turns, #18 AWG, 0.170 ID, 7/16 Length L9 -- 1.0, #18 AWG Wire with 5 Ferrite Beads B -- Ferrite Bead Board Material -- Glass Teflon, r = 2.56, t = 0.0625 Figure 1. 140 - 175 MHz Broadband Circuit Schematic MRF553 2 MOTOROLA RF DEVICE DATA 20 18 16 G pe , POWER GAIN (dB) 14 12 10 8 6 4 2 140 150 160 f, FREQUENCY (MHz) 170 Pout = 1.5 W, VCC = 12.5 Vdc IRL IRL, INPUT RETURN LOSS (dB) Gpe c 100 90 80 70 60 50 5 40 10 30 15 20 20 10 0 180 c , COLLECTOR EFFICIENCY (%) ZOL* Ohms VCC = 12.5 V; Pin 50 mW 1.7-j4.1 2.3-j4.6 100 mW 1.8-j3.1 2.4-j1.2 150 mW 1.9-j2.7 2.4-j5.7 1.0 W 9.9-j11.1 12.1-j14.9 VCC = 7.5 V; Pout 1.6 W 10.6-j5.1 7.2-j9.8 2.2 W 10-j4.9 8.1-j5.4 VCC = 12.5 V; Pout 1.1 W 28.3-j21.5 2.0 W 16-j20.5 2.6 W 16.3-j16.5 30.8-j23.3 11.4-j20.9 11.1-j14.3 ZOL* Ohms VCC = 12.5 V; Pin 25 mW 1.6-j10.7 50 mW 2.5-j7.1 100 mW 2.2-j1.3 VCC = 7.5 V; Pout 1.25 W 31.8-j9.2 1.5 W 32-j8.9 2.0 W 30.2-j10.7 VCC = 12.5 V; Pout 1.5 W 45.8-j7.2 2.25 W 45.2-j3.9 3.0 W 40-j4.5 Figure 2. Typical Performance in Broadband Circuit Zin Ohms f Frequency MHz 140 175 VCC = 7.5 V; Pin 100 mW 1.65-j3.6 2.5-j5.6 200 mW 2.0-j2.6 2.3-j5.9 300 mW 2.3-j1.2 2.8-j4.0 Zin Ohms f Frequency MHz 90 VCC = 7.5 V; Pin 50 mW 2.5-j9.3 100 mW 2.5-j6.4 200 mW 2.5-j4.4 ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, voltage and frequency. Table 1. Zin and ZOL versus Collector Voltage, Input Power, and Output Power MOTOROLA RF DEVICE DATA MRF553 3 2.5 Pout , POWER OUTPUT (WATTS) Pout , POWER OUTPUT (WATTS) 4 2 3 1.5 2 f = 175 MHz VCC = 12.5 Vdc 1 1 f = 175 MHz VCC = 7.5 Vdc 0.5 0 100 200 Pin, POWER INPUT (mW) 300 400 0 50 100 Pin, POWER INPUT (mW) 150 200 Figure 3. Power Output versus Power Input Figure 4. Power Output versus Power Input 4 Pout , POWER OUTPUT (WATTS) Pout , OUTPUT POWER (WATTS) 4 3 Pin = 300 mW 2 200 mW 100 mW 1 VCC = 7.5 Vdc 140 150 160 f, FREQUENCY (MHz) 170 180 3 Pin = 150 mW 100 mW 2 50 mW 1 VCC = 12.5 Vdc 140 150 160 f, FREQUENCY (MHz) 170 180 Figure 5. Power Output versus Frequency Figure 6. Power Output versus Frequency 4 Pin = 150 mW 4 Pin = 150 mW Pout , POWER OUTPUT (WATTS) f = 140 MHz 3 Pout , POWER OUTPUT (WATTS) 100 mW f = 175 MHz 3 100 mW 2 50 mW 1 2 50 mW 1 6 8 10 12 VCC, COLLECTOR VOLTAGE (Vdc) 14 16 6 8 10 12 VCC, COLLECTOR VOLTAGE (Vdc) 14 16 Figure 7. Power Output versus Collector Voltage Figure 8. Power Output versus Collector Voltage MRF553 4 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS F R 1 H 4 3 2 A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. LEAD DIMENSIONS UNCONTROLLED WITHIN DIMENSION N AND R. DIM A C D F H J K N R T INCHES MIN MAX 0.175 0.205 0.075 0.100 0.033 0.039 0.097 0.104 0.348 0.383 0.008 0.012 0.285 0.320 --- 0.065 --- 0.128 0.025 0.040 MILLIMETERS MIN MAX 4.45 5.20 1.91 2.54 0.84 0.99 2.46 2.64 8.84 9.72 0.24 0.30 7.24 8.12 --- 1.65 --- 3.25 0.64 1.01 D K N T SEATING PLANE C J STYLE 2: PIN 1. 2. 3. 4. COLLECTOR EMITTER BASE EMITTER CASE 317D-02 ISSUE C MOTOROLA RF DEVICE DATA MRF553 5 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 MRF553 6 *MRF553/D* MRF553/D MOTOROLA RF DEVICE DATA |
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